Synchronous Flow-through Sram, IS64LF12836EC-7.5B3LA3, Integrated Silicon Solution INC
The 4Mb product features high-speed, low-power synchronous static RAM designed to provide burstable, high-performance memory for communication and networking applications. The IS61(64)LF/VF12836EC is organized as 131,072 words by 36 bits. The IS61(64)LF/VF12832EC is organized as 131,072 words by 32 bits. The IS61(64)LF/VF25618EC is organized as 262,144 words by 18 bits. Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input. Write cycles are internally self-timed and are initiated by the rising edge of the clock input. Write cycles can be one to four bytes wide as controlled by the write control inputs. Separate byte enables allow individual bytes to be written. The byte write operation is performed by using the byte write enable (/BWE) input combined with one or more individual byte write signals (/BWx).
Features
- Internal self-timed write cycle
- Individual Byte Write Control and Global Write
- Clock controlled, registered address, data and control
- Burst sequence control using MODE input
- Three chip enable option for simple depth expansion and address pipelining
- Common data inputs and data outputs
- Auto Power-down during deselect
- Single cycle deselect
- Snooze MODE for reduced-power standby
