Ultra Low Power Cmos Static Ram, IS62WV25616EBLL-45BLI, Integrated Silicon Solution INC
The IS62WV25616EBLL-45BLI is a high-speed, low power, 4M bit static RAM organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields a high-performance and low power consumption device. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1# is LOW, CS2 is HIGH and both LB# and UB# are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory. A data byte allows Upper Byte (UB#) and Lower Byte (LB#) access.
Features
- CMOS low power operation
- TTL compatible interface levels
- Commercial, Industrial and Automotive temperature support
