IS61WV51216EDBLL-10BLI | Integrated Silicon Solution INC

High-Speed Asynchronous Cmos Static Ram, IS61WV51216EDBLL-10BLI, Integrated Silicon Solution INC

The IS61WV51216EDBLL-10BLI is a high-speed, 8M-bit static RAM organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with an innovative circuit design technique yields high performance and low power consumption device. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with a CMOS input level. Easy memory expansion is provided by using Chip Enable and Output Enable input, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

Features

• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater noise immunity
• TTL compatible inputs and outputs
• Data control for upper and lower bytes