IS61WV25616BLL-10BLI | Integrated Silicon Solution INC

CMOS static RAM, IS61WV25616BLL-10BLI, ISSI

The IS61WV25616BLL-10BLI is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is high (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using chip enable and output enable inputs, CE and OE. The active low Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

Features

• Single power supply
• Fully static operation: no clock or refresh required
• Three state outputs