IS61WV12816DBLL-10BLI | Integrated Silicon Solution INC

High-Speed Asynchronous Cmos Static Ram, IS61WV12816DBLL-10BLI, Integrated Silicon Solution INC

The IS61WV12816DBLL-10BLI is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption device. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

Features

• Three state outputs
• Data control for upper and lower bytes
• Industrial and Automotive temperature support