IS61WV102416DBLL-10BLI | Integrated Silicon Solution INC

High-Speed Asynchronous Cmos Static Ram, IS61WV102416DBLL-10BLI, Integrated Silicon Solution INC

The IS61WV102416DBLL-10BLI is a high-speed, 16M-bit static RAM organized as 1024K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques yields a high-performance and low-power-consumption device. When CS# is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory.

Features

• High- performance, low power CMOS process
• Multiple center power and ground pins for greater noise immunity
• TTL compatible inputs and outputs
• Data Control for upper and lower bytes