IS61NLP51236B-200TQLI | Integrated Silicon Solution INC

State Bus Synchronous Sram, IS61NLP51236B-200TQLI, Integrated Silicon Solution INC

The 18Meg product features high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance, 'no wait' state, device for networking and communications applications. It is organized as 512K words by 36 bits and 1024K words by 18 bits, fabricated with ISSI's advanced CMOS technology. Incorporating a 'no wait' state feature, wait cycles are eliminated when the bus switches from read to write, or write to read. This device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers are controlled by a positive-edge-triggered single clock input. Operations may be suspended and all synchronous inputs ignored when Clock Enable, /CKE is HIGH. In this state the internal device will hold their previous values.

Features

• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single Read/Write control pin
• Clock controlled, registered address, data and control
• Three chip enables for simple depth expansion and address pipelining
• Power Down mode
• Common data inputs and data outputs