IS61NLP102436B-200TQLI | Integrated Silicon Solution INC
SRAM 36MBIT PAR 100LQFP IS61NLP102436B-200TQLI
NCNR (non cancelable / non returnable)
State Bus Synchronous Sram, IS61NLP102436B-200TQLI, Integrated Silicon Solution INC
The 36Meg product features a high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance, “no-wait-state” device for networking and communications applications. It is organized as 1,048,476 words by 36 bits or 2,096,952 words by 18 bits, fabricated with ISSI’s advanced CMOS technology. Incorporating a “no-wait-state” feature, wait cycles are eliminated when the bus switches from read to write or write to read. This product integrates a 2-bit burst counter, a high-speed SRAM core, and high-drive-capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input. Operations may be suspended and all synchronous inputs ignored when Clock Enable (CKE) is HIGH. In this state, the internal device holds its previous values.
Features
- No wait cycles between Read and Write
- Individual Byte Write Control
- Single Read/Write control pin
- Clock controlled, registered address, data and control
- Three chip enables for simple depth expansion and address pipelining
- Power Down mode
- Common data inputs and data outputs
| Filter | Property | Value |
|---|---|---|
| Enclosure | LQFP-100 | |
| Assembly | SMD | |
| Memory size | 36 Mbit | |
| Voltage | 3.135-3.465 V | |
| Access time | 3.1 s | |
| Clock frequency | 200 MHz | |
| Technology | SRAM | |
| min. operating temperature | -40 °C | |
| max. operating temperature | 85 °C |
| Property | Value |
|---|---|
| Customs tariff number | 85423261 |
| MSL | MSL 3 |
| Country of origin | CN |
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |
| SVHC free | Yes |