IS61LV25616AL-10BLI | Integrated Silicon Solution INC

High-Speed Asynchronous Cmos Static Ram, IS61LV25616AL-10BLI, Integrated Silicon Solution INC

The IS61LV25616AL-10BLI is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process, coupled with innovative circuit design techniques, yields a high-performance and low-power-consumption device. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced with CMOS input levels. Easy memory expansion is provided by using the Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

Features

• CMOS low power operation
• TTL compatible interface levels
• Three state outputs
• Data control for upper and lower bytes