Single Cycle Deselect Static Ram, IS61LPS25636A-200TQLI, Integrated Silicon Solution INC
The IS61LPS25636A-200TQLI is a high-speed, low-power synchronous static RAM designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPS25636A is organized as 262,144 words by 36 bits. Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input. Write cycles are internally self-timed and are initiated by the rising edge of the clock input. Write cycles can be one to four bytes wide as controlled by the write control inputs. Separate byte enables allow individual bytes to be written. The byte write operation is performed by using the byte write enable (BWE) input combined with one or more individual byte write signals (BWx).
Features
- Internal self-timed write cycle
- Individual Byte Write Control and Global Write
- Clock controlled, registered address, data and control
- Burst sequence control using MODE input
- Three chip enable option for simple depth expansion and address pipelining
- Common data inputs and data outputs
- Auto Power-down during deselect
- Single cycle deselect
- Snooze MODE for reduced-power standby
