IS46LQ16512B-053BLA2 | Integrated Silicon Solution INC
SDRAM, 8 Gbit, TFBGA-200, Integrated Silicon Solution INC IS46LQ16512B-053BLA2
NCNR (non cancelable / non returnable)
SDRAM, IS46LQ16512B-053BLA2, Integrated Silicon Solution INC
The IS46LQ16512B-053BLA2 is 8Gbit CMOS LPDDR4 SDRAM. The device is organized as 1 channel and the channel is 8-banks and 16-bits. This product uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 16N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 16n bits prefetched to achieve very high bandwidth.
Features
- Single data rate (multiple cycles) command/ address bus
- Bidirectional/differential data strobe per byte of data
- Programmable and on-the-fly burst lengths
- Clock-Stop capability
| Filter | Property | Value |
|---|---|---|
| Enclosure | TFBGA-200 | |
| Assembly | SMD | |
| Memory size | 8 Gbit | |
| Voltage | 1.06-1.17 V | |
| Access time | 3.5 s | |
| Clock frequency | 1866 MHz | |
| Technology | SDRAM | |
| min. operating temperature | -40 °C | |
| max. operating temperature | 105 °C |
| Property | Value |
|---|---|
| Country of origin | CN |
| MSL | MSL 3 |
| Customs tariff number | 85423261 |
| Property | Value |
|---|---|
| SVHC free | Yes |
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |