SDRAM, IS43TR16128DL-125KBL, Integrated Silicon Solution INC
The Memory controller initiates Leveling mode of all DRAMs by setting bit 7 of MR1 to 1. When entering write leveling mode, the DQ pins are in undefined driving mode. During write leveling mode, only NOP or DESELECT commands are allowed, as well as an MRS command to exit write leveling mode. Since the controller levels one rank at a time, the output of other ranks must be disabled by setting MR1 bit A12 to 1. The Controller may assert ODT after tMOD, at which time the DRAM is ready to accept the ODT signal. The Controller may drive DQS low and DQS# high after a delay of tWLDQSEN, at which time the DRAM has applied on-die termination on these signals. After tDQSL and tWLMRD, the controller provides a single DQS, DQS# edge which is used by the DRAM to sample CK - CK# driven from controller. tWLMRD(max) timing is controller dependent.
Features
- High speed data transfer rates with system frequency up to 1066 MHz
- 8 internal banks for concurrent operation
- Programmable CAS Latency
- Programmable CAS WRITE latency (CWL) based on tCK
- BL switch on the fly
- Auto Self Refresh(ASR)
- Self Refresh Temperature (SRT)
- Partial Array Self Refresh
