IS43QR16256B-075UBL | Integrated Silicon Solution INC

SDRAM, IS43QR16256B-075UBL, Integrated Silicon Solution INC

The DDR4 SDRAM is a high-speed dynamic random-access memory internally organized with eight-banks (2 bank groups each with 4 banks). The DDR4 SDRAM uses a 8n prefetch architecture to achieve high-speed operation. The 8n prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR4 SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM core and eight corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins. Read and write operation to the DDR4 SDRAM are burst oriented, start at a selected location, and continue for a burst length of eight or a ‘chopped’ burst of four in a programmed sequence. Operation begins with the registration of an ACTIVATE Command, which is then followed by a Read or Write command. The address bits registered coincident with the ACTIVATE Command are used to select the bank and row to be activated.

Features

• Data Integrity
• DRAM access bandwidth
• Self Refresh Abort
• Fine Granularity Refresh
• Signal Synchronization
• Signal Integrity
• Power Saving and efficiency