IS43LQ32128A-062TBLI | Integrated Silicon Solution INC
DRAM, 4 Gbit, TFBGA-200, Integrated Silicon Solution INC IS43LQ32128A-062TBLI
SDRAM, IS43LQ32128A-062TBLI, Integrated Silicon Solution INC
The IS43LQ32128A-062TBLI is a 4Gbit CMOS LPDDR4 SDRAM. The device is organized as either 1 or 2 channel and each channel is 8-bank and 16-bit. This product uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 16N prefetch architecture with an interface designed to transfer one data word per clock cycle at the I/O pin. This product offers fully synchronous operation referenced to both the rising and falling edge of the clock. The data path is internally pipelined and 16n bit prefetched to achieve very high bandwidth.
Features
- Single data rate (multiple cycles) command/ address bus
- Bidirectional/differential data strobe per byte of data
- Clock-Stop capability
| Filter | Property | Value |
|---|---|---|
| Enclosure | TFBGA-200 | |
| Assembly | SMD | |
| Memory size | 4 Gbit | |
| Voltage | 1.06-1.17 V | |
| Clock frequency | 1600 MHz | |
| Technology | SDRAM | |
| min. operating temperature | -40 °C | |
| max. operating temperature | 85 °C |
| Property | Value |
|---|---|
| Country of origin | CN |
| MSL | MSL 3 |
| Customs tariff number | 85423261 |
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |
| SVHC free | Yes |