IS43LD16640C-25BLI | Integrated Silicon Solution INC

SDRAM, IS43LD16640C-25BLI, Integrated Silicon Solution INC

The IS43LD16640C-25BLI is 1Gbit CMOS LPDDR2 DRAM. The device is organized as 8 banks of 8Meg words of 16bits or 4Meg words of 32bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 4n bits prefetched to achieve very high bandwidth.

Features

• Multiplexed, double data rate, command/address inputs
• Eight internal banks for concurrent operation
• Bidirectional/differential data strobe per byte of data
• On-chip temperature sensor to control self refresh rate
• Partial -array self refresh
• Deep power-down mode