IS43DR86400E-3DBLI | Integrated Silicon Solution INC

DRAM, 512 Mbit, TFBGA-60, Integrated Silicon Solution INC IS43DR86400E-3DBLI

Order No.: 54S0096
MPN:
IS43DR86400E-3DBLI
IS43DR86400E-3DBLI Integrated Silicon Solution INC Memory ICs
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Unit Price (€ / pc.)
6.7944 € *
Standard delivery time from the manufacturer is: 1 Week
Total Price:
6.79 € *
*incl. VAT plus shipping costs
Subject to prior sale
1 pcs.
6.7944 €

SDRAM, IS43DR86400E-3DBLI, Integrated Silicon Solution INC

ISSI's 512 Mb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls

Features

  • Double data rate interface: two data transfers per clock cycle
  • Differential data strobe (DQS, DQS)
  • 4-bit prefetch architecture
  • 4 internal banks for concurrent operation
  • Posted CAS and programmable additive latency
  • Adjustable data-output drive strength, full and reduced strength options
  • On-die termination (ODT)
Technical specifications
Filter Property Value
Enclosure TFBGA-60
Assembly SMD
Memory size 512 Mbit
Voltage 1.7-1.9 V
Access time 4.5 s
Clock frequency 333 MHz
Technology SDRAM
min. operating temperature -40 °C
max. operating temperature 85 °C
Logistics
Property Value
Country of origin CN
MSL MSL 3
Customs tariff number 85423261
Compliance
Property Value
Date of RoHS guidelines 3/31/15
RoHS conform Yes
SVHC free Yes