IS42S32160F-7BLI | Integrated Silicon Solution INC
DRAM, 512 Mbit, TFBGA-90, Integrated Silicon Solution INC IS42S32160F-7BLI
Order No.: 54S0140
MPN:
IS42S32160F-7BLI
Unit Price (€ / pc.)
17.3759 € *
Standard delivery time from the manufacturer is: 1 Week
Synchronous Dram, IS42S32160F-7BLI, Integrated Silicon Solution INC
ISSI's 512 Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512 Mb SDRAM is organized as follows.
Features
- Internal bank for hiding row access/precharge
- Auto Refresh (CBR)
- Self Refresh
- Random column address every clock cycle
- Burst read/write and burst read/single write operations capability
- Burst termination by burst stop and precharge command
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Enclosure | TFBGA-90 | |
| Assembly | SMD | |
| Memory size | 512 Mbit | |
| Voltage | 3-3.6 V | |
| Access time | 5.4 s | |
| Clock frequency | 143 MHz | |
| Technology | SDRAM | |
| min. operating temperature | -40 °C | |
| max. operating temperature | 85 °C |
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Logistics
| Property | Value |
|---|---|
| Country of origin | TW |
| MSL | MSL 3 |
| Customs tariff number | 85423261 |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |
| SVHC free | Yes |