Flash Memory, IS34MW01G164-BLI, Integrated Silicon Solution INC
The IS34MW01G164-BLI is a 128M x 8/64M x 16 bit with spare 4M x 8/2M x 16 bit capacity. The devices are offered in 1.8V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 1,024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells. A program operation allows to write the 2,112-Byte page in typical 300us and an erase operation can be performed in typical 3ms on a 128K-Byte for X8 device block (or 64KWord for x16 device block).
Features
- Flexible & Efficient Memory Architecture
- Highest performance
- Efficient Read and Program modes
- Command Register Operation
- Cache Program/Read Operation
- Advanced Security Protection
- Hardware Data Protection