SIW10C120 | Diotec
Schottky diode, 1200 V (RRM), 10 A, TO-247-2L, SIW10C120
Unit Price (€ / pc.)
1.666 € *
Standard delivery time from the manufacturer is: On Request
Silicon Schottky Diode, SIW10C120, Diotec
Silicon carbide schottky diode
Features
- Low capacitive charge
- Extremely fast switching
- High reverse voltage
- High power dissipation
- Compliant to RoHS
Applications
- Rectification of high frequencies
- High efficient switching stages
- Power Factor Correction Diodes
- Free-wheeling diodes for inverters
- Commercial / industrial grade
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Junction temperature (max.) | 175 °C | |
| Enclosure | TO-247-2L | |
| Junction temperature (min.) | -50 °C | |
| Surge blocking voltage V RMS | 1200 V | |
| Voltage V RRM (peak reverse voltage) | 1200 V | |
| Version | silicon carbide schottky diode | |
| Assembly | THT | |
| max. operating temperature | 175 °C | |
| Forward Current | 10 A | |
| Number of diodes | 1 | |
| min. operating temperature | -50 °C |
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Logistics
| Property | Value |
|---|---|
| Original Packaging | Bar with 30 pieces |
| Country of origin | CN |
| Customs tariff number | 85411000 |
Compliance
| Property | Value |
|---|---|
| RoHS conform | Yes |
| SVHC free | No |
| Date of RoHS guidelines | 3/31/15 |