DIF120SIC022 | Diotec
Diotec N channel SiC MOSFET, 1200 V, 120 A, TO-247-4L, DIF120SIC022
Unit Price (€ / pc.)
19.8254 € *
Available in 4 Days: 200 pcs. - if ordered today
Silicon Carbide (SiC) MOSFET, DIF120SIC022, Diotec
Features
- SiC Wide Bandgap Material
- Large clearance and creepage
- Kelvin source for fast switching and
- Low on state resistance
- Fast switching times
- Low gate charge
- Avalanche rated
- Compliant to RoHS
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
- Commercial / industrial grade
Technical specifications
Filter | Property | Value |
---|---|---|
max. Voltage | 1200 V | |
Assembly | THT | |
Power loss | 580 W | |
max. operating temperature | 175 °C | |
Version | N channel | |
Enclosure | TO-247-4L | |
min. operating temperature | -55 °C | |
Max. current | 120 A |
Download
Logistics
Property | Value |
---|---|
Country of origin | CN |
Original Packaging | Bar with 30 pieces |
Customs tariff number | 85412900 |
Compliance
Property | Value |
---|---|
SVHC free | No |
Date of RoHS guidelines | 3/31/15 |
RoHS conform | Yes |