DIF065SIC020 | Diotec
Diotec N channel SiC MOSFET, 650 V, 150 A, TO-247-4L, DIF065SIC020
Unit Price (€ / pc.)
23.1455 € *
Standard delivery time from the manufacturer is: 4 Weeks
Silicon Carbide (SiC) MOSFET, DIF065SIC020, Diotec
Features
- SiC Wide Bandgap Material
- Large clearance and creepage
- Kelvin source for fast switching and
- Low on state resistance
- Fast switching times
- Low gate charge
- Compliant to RoHS
Applications
- EV Charging Stations
- Solar Inverter
- Battery Charger
- Power Supplies
- Commercial / industrial grade
Technical specifications
| Filter | Property | Value |
|---|---|---|
| max. Voltage | 650 V | |
| Assembly | THT | |
| Power loss | 550 W | |
| max. operating temperature | 175 °C | |
| Version | N channel | |
| Enclosure | TO-247-4L | |
| min. operating temperature | -55 °C | |
| Max. current | 150 A |
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Logistics
| Property | Value |
|---|---|
| Country of origin | CN |
| Original Packaging | Bar with 30 pieces |
| Customs tariff number | 85412900 |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |