DI7A6N10SQ | Diotec
Diotec N channel MOSFET, 100 V, 7.6 A, SO-8, DI7A6N10SQ
Unit Price (€ / pc.)
0.3451 € *
Standard delivery time from the manufacturer is: 4 Weeks
N-Channel Power MOSFET, DI7A6N10SQ, Diotec
Features
- Low on state resistance
- Fast switching times
- Power Trench Technology
- Low gate charge
- Compliant to RoHS
Applications
- Power Management Units
- Battery powered devices
- Load Switches
- Polarity Protection
- Commercial / industrial grade
Technical specifications
| Filter | Property | Value |
|---|---|---|
| max. Voltage | 100 V | |
| Assembly | SMD | |
| Power loss | 2.5 W | |
| drain-source on resistance RDS (on) max @VGS=10V | 20 mΩ | |
| max. operating temperature | 150 °C | |
| Version | N channel | |
| Gate Charge Qg @10V (nC) | 2.2x10<sup>-8</sup> C | |
| Enclosure | SO-8 | |
| min. operating temperature | -55 °C | |
| Max. current | 7.6 A |
Download
Logistics
| Property | Value |
|---|---|
| Country of origin | CN |
| Original Packaging | Reel with 4,000 pieces |
| Customs tariff number | 85412900 |
| MSL | MSL 1 |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |