DI2A2N100D1K-AQ | Diotec
Diotec N channel MOSFET, 1000 V, 2.2 A, TO-252AA, DI2A2N100D1K-AQ
Unit Price (€ / pc.)
0.6902 € *
Standard delivery time from the manufacturer is: 4 Weeks
N-Channel Power MOSFET, DI2A2N100D1K-AQ, Diotec
Features
- High Drain-Source voltage
- ESD-protected Gate
- Low on state resistance
- Fast switching times
- Avalanche rated
- Compliant to RoHS
Applications
- Power Supplies
- Power Factor Correction (PFC)
- High Voltage DC Drives
- Battery Management Systems (BMS)
- Commercial / industrial grade
Technical specifications
| Filter | Property | Value |
|---|---|---|
| max. Voltage | 1000 V | |
| Assembly | SMD | |
| Power loss | 29.7 W | |
| drain-source on resistance RDS (on) max @VGS=10V | 6.8 Ω | |
| max. operating temperature | 150 °C | |
| Version | N channel | |
| Gate Charge Qg @10V (nC) | 2.5x10<sup>-8</sup> C | |
| Enclosure | TO-252AA | |
| min. operating temperature | -55 °C | |
| Max. current | 2.2 A |
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Logistics
| Property | Value |
|---|---|
| Country of origin | CN |
| Original Packaging | Reel with 2,500 pieces |
| Customs tariff number | 85412900 |
| MSL | MSL 3 |
Compliance
| Property | Value |
|---|---|
| SVHC free | No |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |