DI170SIC850D7 | Diotec
Diotec N channel SiC MOSFET, 1700 V, 7 A, TO-263-7, DI170SIC850D7
Unit Price (€ / pc.)
3.5581 € *
Standard delivery time from the manufacturer is: 4 Weeks
Silicon Carbide (SiC) MOSFET, DI170SIC850D7, Diotec
Features
- SiC Wide Bandgap Material
- Kelvin source for fast switching and reduced noise level at Gate
- Low on state resistance
- Fast switching times
- Low gate charge
- Compliant to RoHS
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Charging Station
- Inverter
- Commercial / industrial grade
Technical specifications
| Filter | Property | Value |
|---|---|---|
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| max. Voltage | 1700 V | |
| Max. current | 7 A | |
| Power loss | 62 W | |
| Version | N channel | |
| Enclosure | TO-263-7 |
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Logistics
| Property | Value |
|---|---|
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 800 pieces |
| Country of origin | CN |
Compliance
| Property | Value |
|---|---|
| RoHS conform | Yes |
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |