DI120SIC081D7 | Diotec

Diotec N channel SiC MOSFET, 1200 V, 24 A, TO-263-7, DI120SIC081D7

Order No.: 09S4848
MPN:
DI120SIC081D7
Series: DI
DI120SIC081D7 Diotec MOSFETs
Image may differ
Unit Price (€ / pc.)
7.0210 € *
Standard delivery time from the manufacturer is: 4 Weeks
Total Price:
5,616.80 € *
*incl. VAT plus shipping costs
Subject to prior sale
800 pcs.
7.0210 €

Silicon Carbide (SiC) MOSFET, DI120SIC081D7, Diotec

Features

  • Trench Technology
  • Zero Turn-off Gate Voltage
  • Low on state resistance
  • Fast switching times
  • Low gate charge
  • Avalanche rated
  • Compliant to RoHS

Applications

  • DC/DC Converters
  • Power Supplies
  • DC Drives
  • Charging Station
  • Inverter
  • Commercial / industrial grade
Technical specifications
Filter Property Value
max. Voltage 1200 V
Assembly SMD
Power loss 93 W
drain-source on resistance RDS (on) max @VGS=10V 81 mΩ
max. operating temperature 150 °C
Version N channel
Enclosure TO-263-7
min. operating temperature -55 °C
Max. current 24 A
Logistics
Property Value
Country of origin CN
Original Packaging Reel with 800 pieces
Customs tariff number 85412900
Compliance
Property Value
SVHC free Yes
Date of RoHS guidelines 3/31/15
RoHS conform Yes