DI120SIC081D7 | Diotec

Diotec N channel SiC MOSFET, 1200 V, 24 A, TO-263-7, DI120SIC081D7

Order No.: 09S4848
MPN:
DI120SIC081D7
Series: DI
DI120SIC081D7 Diotec MOSFETs
Image may differ
Unit Price (€ / pc.)
7.0210 € *
Standard delivery time from the manufacturer is: 4 Weeks
Total Price:
5,616.80 € *
*incl. VAT plus shipping costs
Subject to prior sale
800 pcs.
7.0210 €

Silicon Carbide (SiC) MOSFET, DI120SIC081D7, Diotec

Features

  • Trench Technology
  • Zero Turn-off Gate Voltage
  • Low on state resistance
  • Fast switching times
  • Low gate charge
  • Avalanche rated
  • Compliant to RoHS

Applications

  • DC/DC Converters
  • Power Supplies
  • DC Drives
  • Charging Station
  • Inverter
  • Commercial / industrial grade
Technical specifications
Filter Property Value
max. operating temperature 150 °C
min. operating temperature -55 °C
Assembly SMD
max. Voltage 1200 V
Max. current 24 A
Power loss 93 W
Version N channel
Enclosure TO-263-7
drain-source on resistance RDS (on) max @VGS=10V 81 mΩ
Logistics
Property Value
Customs tariff number 85412900
Original Packaging Reel with 800 pieces
Country of origin CN
Compliance
Property Value
RoHS conform Yes
SVHC free Yes
Date of RoHS guidelines 3/31/15