DIW120SIC023-AQ | Diotec Semiconductors
Diotec Semiconductors N channel SiC MOSFET, 1200 V, 130 A, TO-247-3L, DIW120SIC023-AQ
Unit Price (€ / pc.)
76.7193 € *
Available in 4 Days: 120 pcs. - if ordered today
Silicon Carbide (SiC) MOSFET, DIW120SIC023-AQ, Diotec
Features
- SiC Wide Bandgap Material
- Low on state resistance
- Fast switching times
- Low gate charge
- Avalanche rated
- Compliant to RoHS
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
- Commercial / industrial grade
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Power loss | 600 W | |
| Version | N channel | |
| Assembly | THT | |
| min. operating temperature | -55 °C | |
| max. Voltage | 1200 V | |
| Max. current | 130 A | |
| Enclosure | TO-247-3L | |
| max. operating temperature | 175 °C |
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Logistics
| Property | Value |
|---|---|
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Bar with 30 pieces |
Compliance
| Property | Value |
|---|---|
| SVHC free | No |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |