DI4A5C06SQ | Diotec Semiconductors

Name: Diotec Semiconductors N/P-channel MOSFET, 60 V, 4.5 A, SO-8, DI4A5C06SQ
Brand: Diotec Semiconductors
SKU: 09S4942
Availability: InStock

Diotec Semiconductors N/P-channel MOSFET, 60 V, 4.5 A, SO-8, DI4A5C06SQ

Order No.: 09S4942

MPN:

DI4A5C06SQ

Series: DI

Image may differ

Key Specification:

Version N/P-channel

max. Voltage 60 V

Max. current 4.5 A

drain-source on resistance RDS (on) max @VGS=4,5V 75 mΩ

drain-source on resistance RDS (on) max @VGS=10V 55 mΩ

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.3094 € *

Standard delivery time from the manufacturer is: 8 Weeks

Total Price:

1,237.60 € *

*incl. VAT plus shipping costs

Subject to prior sale

Description

Dual N+P Channel Power MOSFET, DI4A5C06SQ, Diotec

Features

Two complementary MOSFETs
Low profile height
Low on state resistance
Fast switching times
Low gate charge
Compliant to RoHS

Applications

Power Management Units
MOSFET & IGBT driver
Class-D audio amplifier
Commercial / industrial grade

Technical specifications

Filter	Property	Value
	Power loss	1.6 W
	Gate Charge Qg @10V (nC)	1.25x10<sup>-8</sup> C
	Version	N/P-channel
	Assembly	SMD
	drain-source on resistance RDS (on) max @VGS=4,5V	75 mΩ
	min. operating temperature	-55 °C
	drain-source on resistance RDS (on) max @VGS=10V	55 mΩ
	max. Voltage	60 V
	Max. current	4.5 A
	Enclosure	SO-8
	max. operating temperature	150 °C