DI3A0N120D2 | Diotec Semiconductors
Diotec Semiconductors N channel MOSFET, 1200 V, 3 A, TO-263AB, DI3A0N120D2
Unit Price (€ / pc.)
1.0829 € *
Standard delivery time from the manufacturer is: 8 Weeks
N-Channel Power MOSFET, DI3A0N120D2, Diotec
Features
- Advanced Trench Technology
- Standard Level Gate Drive
- Low on state resistance
- Fast switching times
- Low gate charge
- Avalanche rated
- Compliant to RoHS
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Synchronous Rectifiers
- Commercial / industrial grade
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Power loss | 200 W | |
| Gate Charge Qg @10V (nC) | 4.5x10<sup>-8</sup> C | |
| Version | N channel | |
| Assembly | SMD | |
| min. operating temperature | -55 °C | |
| drain-source on resistance RDS (on) max @VGS=10V | 7.5 Ω | |
| max. Voltage | 1200 V | |
| Max. current | 3 A | |
| Enclosure | TO-263AB | |
| max. operating temperature | 150 °C |
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Logistics
| Property | Value |
|---|---|
| MSL | MSL 3 |
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 800 pieces |
Compliance
| Property | Value |
|---|---|
| SVHC free | No |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |