DI120SIC081D7 | Diotec Semiconductors
Diotec Semiconductors N channel SiC MOSFET, 1200 V, 24 A, TO-263-7, DI120SIC081D7
Unit Price (€ / pc.)
7.0210 € *
Standard delivery time from the manufacturer is: 8 Weeks
Silicon Carbide (SiC) MOSFET, DI120SIC081D7, Diotec
Features
- Trench Technology
- Zero Turn-off Gate Voltage
- Low on state resistance
- Fast switching times
- Low gate charge
- Avalanche rated
- Compliant to RoHS
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Charging Station
- Inverter
- Commercial / industrial grade
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Power loss | 93 W | |
| Version | N channel | |
| Assembly | SMD | |
| min. operating temperature | -55 °C | |
| drain-source on resistance RDS (on) max @VGS=10V | 81 mΩ | |
| max. Voltage | 1200 V | |
| Max. current | 24 A | |
| Enclosure | TO-263-7 | |
| max. operating temperature | 150 °C |
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Logistics
| Property | Value |
|---|---|
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 800 pieces |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |