ZXMN6A11DN8TA | Diodes
Diodes N channel MOSFET, 60 V, 3.2 A, SOIC-8, ZXMN6A11DN8TA
Unit Price (€ / pc.)
0.5355 € *
Standard delivery time from the manufacturer is: 10 Weeks
MOSFET, ZXMN6A11DN8TA, Diodes
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
- Low on-resistance
- Fast switching speed
- Low threshold
- Low gate drive
Applications
- DC-DC Converters
- Power management functions
- Motor control
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Gate Charge Qg @10V (nC) | 5.7x10<sup>-9</sup> C | |
| Assembly | SMD | |
| drain-source on resistance RDS (on) max @VGS=10V | 120 mΩ | |
| max. Voltage | 60 V | |
| Version | N channel | |
| max. operating temperature | 150 °C | |
| Enclosure | SOIC-8 | |
| min. operating temperature | -55 °C | |
| Max. current | 3.2 A |
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Logistics
| Property | Value |
|---|---|
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 500 pieces |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| RoHS conform | Yes |