ZXMN6A09GTA | Diodes
Diodes N channel MOSFET, 60 V, 7.5 A, TO-261, ZXMN6A09GTA
Order No.: 33S2884
EAN: 4099879034595
MPN:
ZXMN6A09GTA
Unit Price (€ / pc.)
0.9639 € *
Standard delivery time from the manufacturer is: 10 Weeks
MOSFET, ZXMN6A09GTA, Diodes
This new generation trench MOSFET features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high-efficiency power management applications.
Features
- High voltage
- Low on-resistance
- Fast switching speed
- Low threshold
- Low gate drive
Applications
- DC-DC Converters
- Power management functions
- Disconnect switches
- Motor control
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Gate Charge Qg @10V (nC) | 2.42x10<sup>-8</sup> C | |
| Assembly | SMD | |
| drain-source on resistance RDS (on) max @VGS=10V | 40 mΩ | |
| Power loss | 3.9 W | |
| max. Voltage | 60 V | |
| Version | N channel | |
| max. operating temperature | 150 °C | |
| Enclosure | TO-261 | |
| min. operating temperature | -55 °C | |
| Max. current | 7.5 A |
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Logistics
| Property | Value |
|---|---|
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 1,000 pieces |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| RoHS conform | Yes |