ZXMN10B08E6TA | Diodes
Diodes N channel MOSFET, 100 V, 1.6 A, SOT-23, ZXMN10B08E6TA
Unit Price (€ / pc.)
0.8568 € *
Standard delivery time from the manufacturer is: 1 Week
MOSFET, ZXMN10B08E6TA, Diodes
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
- Low on-resistance
- Fast switching speed
- Low threshold
- Low gate drive
Applications
- DC-DC Converters
- Power management functions
- Disconnect switches
- Motor control
Technical specifications
| Filter | Property | Value |
|---|---|---|
| max. Voltage | 100 V | |
| Power loss | 1.7 W | |
| drain-source on resistance RDS (on) max @VGS=10V | 230 mΩ | |
| Enclosure | SOT-23 | |
| Max. current | 1.6 A | |
| Gate Charge Qg @10V (nC) | 9.2x10<sup>-9</sup> C | |
| max. operating temperature | 150 °C | |
| Assembly | SMD | |
| min. operating temperature | -55 °C | |
| Version | N channel |
Download
Logistics
| Property | Value |
|---|---|
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 3,000 pieces |
Compliance
| Property | Value |
|---|---|
| RoHS conform | Yes |
| SVHC free | Yes |