ZXMN10A11GTA | Diodes
Diodes N channel MOSFET, 100 V, 1.7 A, TO-261, ZXMN10A11GTA
Order No.: 33S2840
EAN: 4099879034526
MPN:
ZXMN10A11GTA
Unit Price (€ / pc.)
0.833 € *
Standard delivery time from the manufacturer is: 1 Week
MOSFET, ZXMN10A11GTA, Diodes
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
- Fast switching speed
- Low gate drive
- Low input capacitance
Applications
- Motor control
- DC-DC Converters
- Power management functions
- Uninterrupted power supply
Technical specifications
| Filter | Property | Value |
|---|---|---|
| max. Voltage | 100 V | |
| Power loss | 3.9 W | |
| drain-source on resistance RDS (on) max @VGS=10V | 350 mΩ | |
| Enclosure | TO-261 | |
| Max. current | 1.7 A | |
| Gate Charge Qg @10V (nC) | 5.4x10<sup>-9</sup> C | |
| max. operating temperature | 150 °C | |
| Assembly | SMD | |
| min. operating temperature | -55 °C | |
| Version | N channel |
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Logistics
| Property | Value |
|---|---|
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 1,000 pieces |
Compliance
| Property | Value |
|---|---|
| RoHS conform | Yes |
| SVHC free | Yes |