DMN63D8LDW-7 | Diodes
Diodes N channel dual MOSFET, 30 V, 220 mA, SOT-363, DMN63D8LDW-7
Order No.: 33S2411
EAN: 4099879034434
MPN:
DMN63D8LDW-7
Unit Price (€ / pc.)
0.1833 € *
Standard delivery time from the manufacturer is: 1 Week
MOSFET, DMN63D8LDW-7, Diodes
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
- Low on-resistance
- Low input capacitance
- Fast switching speed
- Low Input/Output Leakage
- Ultra-Small surface mount package
Applications
- DC-DC Converters
- Power management functions
- Battery operated systems and solid-state relays
Technical specifications
| Filter | Property | Value |
|---|---|---|
| max. Voltage | 30 V | |
| drain-source on resistance RDS (on) max @VGS=10V | 2.8 Ω | |
| Enclosure | SOT-363 | |
| Max. current | 220 mA | |
| Gate Charge Qg @10V (nC) | 8.7x10<sup>-7</sup> C | |
| max. operating temperature | 150 °C | |
| Assembly | SMD | |
| min. operating temperature | -55 °C | |
| Version | N channel |
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Logistics
| Property | Value |
|---|---|
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 3,000 pieces |
Compliance
| Property | Value |
|---|---|
| RoHS conform | Yes |
| SVHC free | Yes |