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DMN3730UFB4-7 | Diodes

Diodes N channel MOSFET, 30 V, 750 mA, XFDFN-3, DMN3730UFB4-7

Order No.: 33S2334
EAN: 4099879034373
MPN:
DMN3730UFB4-7
Diodes
DMN3730UFB4-7 Diodes MOSFETs
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Key Specification:
Version N channel
max. Voltage 30 V
Max. current 750 mA
drain-source on resistance RDS (on) max @VGS=10V 460 mΩ
Download Datasheet Technical specifications
Unit Price (€ / pc.)
0.2856 € *
Standard delivery time from the manufacturer is: 1 Week
Total Price:
2.86 € *
*incl. VAT plus shipping costs
Subject to prior sale
10 pcs.
0.2856 €
Description
Technical specifications
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Logistics
Compliance

MOSFET, DMN3730UFB4-7, Diodes

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

  • Ultra Low Profile Package for Thin Application
  • Low VGS(th), can be driven directly from a battery
  • Low RDS(on)

Applications

  • Load switch
  • Portable applications
  • Power management functions
Technical specifications
max. Voltage 30 V
drain-source on resistance RDS (on) max @VGS=10V 460 mΩ
Enclosure XFDFN-3
Max. current 750 mA
Gate Charge Qg @10V (nC) 1.6x10<sup>-9</sup> C
max. operating temperature 150 °C
Assembly SMD
min. operating temperature -55 °C
Version N channel
Articles of same specification 0
Logistics
Country of origin CN
Customs tariff number 85412900
Original Packaging Reel with 3,000 pieces
Compliance
RoHS conform Yes
SVHC free Yes