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DMN1019USN-7 | Diodes

Diodes N channel MOSFET, 12 V, 9.3 A, TO-236, DMN1019USN-7

Order No.: 33S2154
EAN: 4099879034335
MPN:
DMN1019USN-7
Diodes
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Key Specification:
Version N channel
max. Voltage 12 V
Max. current 9.3 A
drain-source on resistance RDS (on) max @VGS=10V 10 mΩ
Download Datasheet Technical specifications
Unit Price (€ / pc.)
0.4284 € *
Standard delivery time from the manufacturer is: 1 Week
Total Price:
4.28 € *
*incl. VAT plus shipping costs
Subject to prior sale
10 pcs.
0.4284 €
Description
Technical specifications
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Logistics
Compliance

MOSFET, DMN1019USN-7, Diodes

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

  • Low on-resistance
  • ESD Protected gate

Applications

  • Load switch
  • DC-DC Converters
  • Power management functions
Technical specifications
Enclosure TO-236
Gate Charge Qg @10V (nC) 5.06x10<sup>-8</sup> C
Max. current 9.3 A
max. Voltage 12 V
max. operating temperature 150 °C
min. operating temperature -55 °C
Version N channel
Assembly SMD
drain-source on resistance RDS (on) max @VGS=10V 10 mΩ
Articles of same specification 0
Logistics
Original Packaging Reel with 3,000 pieces
Country of origin CN
Customs tariff number 85412900
Compliance
SVHC free Yes
RoHS conform Yes