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BSS138-7-F | Diodes

Diodes N channel N-channel MOSFET in enhancement mode, 50 V, 200 mA, SOT-23, BSS138-7-F

Order No.: 33S2014
MPN:
BSS138-7-F
Diodes
BSS138-7-F Diodes MOSFETs
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Key Specification:
Version N channel
max. Voltage 50 V
Max. current 200 mA
drain-source on resistance RDS (on) max @VGS=10V 3.5 Ω
Download Datasheet Technical specifications
Unit Price (€ / pc.)
0.0345 € *
Available in 5 Days: 9,800 pcs. - if ordered today
Total Price:
3.45 € *
*incl. VAT plus shipping costs
Subject to prior sale
100 pcs.
0.0345 €
Description
Technical specifications
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Logistics
Compliance

N-channel Enhancement Mode MOSFET, BSS138-7-F, Diodes

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
Technical specifications
max. Voltage 50 V
Power loss 300 mW
drain-source on resistance RDS (on) max @VGS=10V 3.5 Ω
Enclosure SOT-23
Max. current 200 mA
max. operating temperature 150 °C
Assembly SMD
min. operating temperature -55 °C
Version N channel
Articles of same specification 0
Logistics
Customs tariff number 85412100
Original Packaging Reel with 3,000 pieces
Compliance
RoHS conform Yes
SVHC free Yes