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BSS127S-7 | Diodes

Diodes N channel MOSFET, 600 V, 50 mA, TO-236, BSS127S-7

Order No.: 33S2012
EAN: 4099879034243
MPN:
BSS127S-7
Series: BSS12
Diodes
BSS127S-7 Diodes MOSFETs
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Key Specification:
Version N channel
max. Voltage 600 V
Max. current 50 mA
drain-source on resistance RDS (on) max @VGS=10V 160 Ω
Download Datasheet Technical specifications
Unit Price (€ / pc.)
0.3213 € *
Standard delivery time from the manufacturer is: 1 Week
Total Price:
3.21 € *
*incl. VAT plus shipping costs
Subject to prior sale
10 pcs.
0.3213 €
Description
Technical specifications
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Logistics
Compliance

MOSFET, BSS127S-7, Diodes

This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications.

Features

  • Low input capacitance
  • High BVDSS rating for power application
  • Low Input/Output Leakage

Applications

  • Motor control
  • DC-DC Converters
  • Power management functions
Technical specifications
max. Voltage 600 V
Power loss 1.25 W
drain-source on resistance RDS (on) max @VGS=10V 160 Ω
Enclosure TO-236
Max. current 50 mA
Gate Charge Qg @10V (nC) 1.08x10<sup>-9</sup> C
max. operating temperature 150 °C
Assembly SMD
min. operating temperature -55 °C
Version N channel
Articles of same specification 0
Logistics
Country of origin CN
Customs tariff number 85412900
Original Packaging Reel with 3,000 pieces
Compliance
RoHS conform Yes
SVHC free Yes