BSN20-7 | Diodes
Diodes N channel MOSFET, 50 V, 500 mA, TO-236, BSN20-7
Unit Price (€ / pc.)
0.2570 € *
Standard delivery time from the manufacturer is: 1 Week
MOSFET, BSN20-7, Diodes
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
- Low on-resistance
- Low input capacitance
- Fast switching speed
- Low Input/Output Leakage
Applications
- Backlighting
- DC-DC Converters
- Power management functions
Technical specifications
Filter | Property | Value |
---|---|---|
max. Voltage | 50 V | |
Power loss | 920 mW | |
drain-source on resistance RDS (on) max @VGS=10V | 1.8 Ω | |
Enclosure | TO-236 | |
Max. current | 500 mA | |
Gate Charge Qg @10V (nC) | 8x10<sup>-10</sup> C | |
max. operating temperature | 150 °C | |
Assembly | SMD | |
min. operating temperature | -55 °C | |
Version | N channel |
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Logistics
Property | Value |
---|---|
Country of origin | CN |
Customs tariff number | 85412900 |
Original Packaging | Reel with 3,000 pieces |
Compliance
Property | Value |
---|---|
RoHS conform | Yes |
SVHC free | Yes |