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2N7002W-7-F | Diodes

Diodes N channel FET, 60 V, 115 mA, SOT-323, 2N7002W-7-F

Order No.: 33S2007
EAN: 4099879034212
MPN:
2N7002W-7-F
Series: 2N7
Diodes
2N7002W-7-F Diodes MOSFETs
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Key Specification:
Version N channel
max. Voltage 60 V
Max. current 115 mA
drain-source on resistance RDS (on) max @VGS=10V 7.5 Ω
Download Datasheet Technical specifications
Unit Price (€ / pc.)
0.1856 € *
Standard delivery time from the manufacturer is: 1 Week
Total Price:
1.86 € *
*incl. VAT plus shipping costs
Subject to prior sale
10 pcs.
0.1856 €
Description
Technical specifications
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Logistics
Compliance

MOSFET, 2N7002W-7-F, Diodes

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

  • Low on-resistance
  • Low input capacitance
  • Fast switching speed
  • Low Input/Output Leakage
  • Ultra-Small surface mount package

Applications

  • Motor control
  • Power management functions
Technical specifications
max. Voltage 60 V
Power loss 200 mW
drain-source on resistance RDS (on) max @VGS=10V 7.5 Ω
Enclosure SOT-323
Max. current 115 mA
max. operating temperature 150 °C
Assembly SMD
min. operating temperature -55 °C
Version N channel
Articles of same specification 0
Logistics
Country of origin CN
Customs tariff number 85412900
Original Packaging Reel with 3,000 pieces
Compliance
RoHS conform Yes
SVHC free Yes