BCP5516TA | Diodes
Bipolar junction transistor, NPN, 1 A, 60 V, SMD, SOT-223, BCP5516TA
Unit Price (€ / pc.)
0.3094 € *
Standard delivery time from the manufacturer is: 1 Week
NPN transistor, BCP5516TA, DIODES
NPN medium power transistor in SOT223 case. It is suitable for power switching, amplification applications, AF Driver and output stages.
Features
- Halogen and antimony free
- RoHS Compliant
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Transit frequency fTmin | 150 MHz | |
| max. operating temperature | 150 °C | |
| Saturation voltage | 500 mV | |
| Min DC gain | 100 mA | |
| Max DC amplification | 250 mA | |
| Assembly | SMD | |
| max.voltage between collector and emitter Vceo | 60 V | |
| min. operating temperature | -65 °C | |
| max.voltage between collector and base Vcbo | 60 V | |
| Power dissipation | 2 W | |
| Enclosure | SOT-223 | |
| Collector current | 1 A | |
| Version | NPN |
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Logistics
| Property | Value |
|---|---|
| Country of origin | CN |
| Original Packaging | Reel with 1,000 pieces |
| Customs tariff number | 85412900 |
Compliance
| Property | Value |
|---|---|
| RoHS conform | Yes |
| SVHC free | Yes |