16-Kbit nonvolatile memory, FM25C160B-GTR, Cypress
The FM25C160B-GTR is a 16-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. The FM25C160B-GTR performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM25C160B-GTR is capable of supporting 1013 read/write cycles, or 10 million times more write cycles than EEPROM.
Features
- Very fast serial peripheral interface (SPI)
- Sophisticated write protection scheme
- Low power consumption
- Restriction of hazardous substances (RoHS) compliant
