MJ4035 | COMSET Semiconductors
Bipolar junction transistor, NPN, 16 A, 100 V, THT, TO-3, MJ4035
Unit Price (€ / pc.)
4.2721 € *
Standard delivery time from the manufacturer is: On Request
NPN power transistor, MJ4035, COMSET
The MJ4035 silicon epitaxial-base NPN power transistor in monolithic Darlington configuration is mounted in Jedec TO-3 metal case. It is intented for use as output devices in complementary general purpose amplifier applications.
Features
- Compliance to RoHS
Technical specifications
| Filter | Property | Value |
|---|---|---|
| max. operating temperature | 200 °C | |
| Saturation voltage | 2.5 V | |
| Min DC gain | 1000 mA | |
| Assembly | THT | |
| max.voltage between collector and emitter Vceo | 100 V | |
| min. operating temperature | -65 °C | |
| max.voltage between collector and base Vcbo | 100 V | |
| Power dissipation | 150 W | |
| Enclosure | TO-3 | |
| Collector current | 16 A | |
| Version | NPN | |
| Rated current | 16 A |
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Logistics
| Property | Value |
|---|---|
| Country of origin | CN |
| Original Packaging | Tray with 50 pieces |
| Customs tariff number | 85412900 |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |
| SVHC free | Yes |