BDX53C | COMSET Semiconductors
Bipolar junction transistor, NPN, 8 A, 100 V, THT, TO-220, BDX53C
Unit Price (€ / pc.)
0.4046 € *
Standard delivery time from the manufacturer is: 4 Weeks
NPN transistor, BDX53C, COMSET
The BDX53C is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration and is mounted in Jedec TO-220 plastic package. It is intented for use in audio amplifiers, medium power linear and switching applications.
Features
- Compliance to RoHS
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Power dissipation | 60 W | |
| Assembly | THT | |
| max.voltage between collector and base Vcbo | 100 V | |
| Transit frequency fTmin | 20 MHz | |
| Rated current | 8 A | |
| max. operating temperature | 150 °C | |
| Version | NPN | |
| Enclosure | TO-220 | |
| Collector current | 8 A | |
| Min DC gain | 750 mA | |
| Saturation voltage | 2 V | |
| min. operating temperature | -65 °C | |
| max.voltage between collector and emitter Vceo | 100 V |
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Logistics
| Property | Value |
|---|---|
| Country of origin | CN |
| Original Packaging | Bar with 50 pieces |
| Customs tariff number | 85412900 |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |