BDV65C | COMSET Semiconductors

Name: Bipolar junction transistor, NPN, 12 A, 120 V, THT, TO-3P, BDV65C
Brand: COMSET Semiconductors
SKU: 15S5010
Price: 4.52 EUR
Availability: InStock

Bipolar junction transistor, NPN, 12 A, 120 V, THT, TO-3P, BDV65C

Order No.: 15S5010

EAN: 4099879028525

MPN:

BDV65C

Image may differ

Key Specification:

Assembly THT

Enclosure TO-3P

Version NPN

Saturation voltage 2 V

Collector current 12 A

Download Datasheet Technical specifications

Unit Price (€ / pc.)

4.5220 € *

Available: 16 pcs.

Leadtime: 6 Weeks **

Total Price:

4.52 € *

Price list

Quantity

Price per unit*

1 pcs.

4.5220 €

30 pcs.

3.9746 €

120 pcs.

3.7604 €

270 pcs.

3.6295 €

1020 pcs.

3.4272 €

*incl. VAT plus shipping costs

**Subject to prior sale

Description

NPN power transistor, BDV65C, COMSET

The BDV65C is a silicon epitaxial base transistor mounted in TO-3PN. It is designed for audio output stages and general amplifier and switching applications.

Features

Compliance to RoHS

Technical specifications

	Version	NPN
	Enclosure	TO-3P
	max. operating temperature	150 °C
	max.voltage between collector and base Vcbo	120 V
	max.voltage between collector and emitter Vceo	120 V
	min. operating temperature	-65 °C
	Assembly	THT
	Rated current	12 A
	Saturation voltage	2 V
	Power dissipation	125 W
	Collector current	12 A
	Min DC gain	1000 mA