BDV65C | COMSET Semiconductors
Bipolar junction transistor, NPN, 12 A, 120 V, THT, TO-3P, BDV65C
NCNR (non cancelable / non returnable)
Unit Price (€ / pc.)
3.2725 € *
Available: 18 pcs.
NPN power transistor, BDV65C, COMSET
The BDV65C is a silicon epitaxial base transistor mounted in TO-3PN. It is designed for audio output stages and general amplifier and switching applications.
Features
- Compliance to RoHS
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Assembly | THT | |
| Enclosure | TO-3P | |
| Version | NPN | |
| Saturation voltage | 2 V | |
| Collector current | 12 A | |
| max.voltage between collector and emitter Vceo | 120 V | |
| max.voltage between collector and base Vcbo | 120 V | |
| Power dissipation | 125 W | |
| Min DC gain | 1000 mA | |
| Rated current | 12 A | |
| min. operating temperature | -65 °C | |
| max. operating temperature | 150 °C |
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Logistics
| Property | Value |
|---|---|
| Original Packaging | Bar with 30 pieces |
| Customs tariff number | 85412900 |
| Country of origin | CN |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |