MJE350 | CDIL
Bipolar junction transistor, PNP, -500 mA, 300 V, THT, TO-126, MJE350
Unit Price (€ / pc.)
0.2380 € *
Available: 60 pcs.
Power transistor, MJE350, CDIL
This epitaxial silicon power transistor is suitable for use in high voltage general purpose applications.
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Power dissipation | 1.25 W | |
| Assembly | THT | |
| max.voltage between collector and base Vcbo | 300 V | |
| Transit frequency fTmin | 4 MHz | |
| Max DC amplification | 240 mA | |
| Rated current | 500 mA | |
| max. operating temperature | 150 °C | |
| Version | PNP | |
| Enclosure | TO-126 | |
| Collector current | -500 mA | |
| Min DC gain | 30 mA | |
| min. operating temperature | -65 °C | |
| max.voltage between collector and emitter Vceo | 300 V |
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Logistics
| Property | Value |
|---|---|
| Country of origin | IN |
| Original Packaging | Bulk with 500 pieces |
| Customs tariff number | 85412900 |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |