BD410 | CDIL
Bipolar junction transistor, NPN, 1 A, 325 V, THT, TO-126, BD410
Unit Price (€ / pc.)
0.7735 € *
Standard delivery time from the manufacturer is: 4 Weeks
NPN transistor, BD410, CDIL
This NPN epitaxial silicon power transistor is used for high power switching.
Technical specifications
| Filter | Property | Value |
|---|---|---|
| max.voltage between collector and emitter Vceo | 325 V | |
| max.voltage between collector and base Vcbo | 500 V | |
| min. operating temperature | -55 °C | |
| Rated current | 1 A | |
| max. operating temperature | 125 °C | |
| Version | NPN | |
| Assembly | THT | |
| Max DC amplification | 240 mA | |
| Saturation voltage | 1.5 V | |
| Collector current | 1 A | |
| Enclosure | TO-126 | |
| Power dissipation | 1.25 W | |
| Min DC gain | 30 mA |
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Logistics
| Property | Value |
|---|---|
| Customs tariff number | 85419000 |
| Country of origin | IN |
Compliance
| Property | Value |
|---|---|
| RoHS conform | Yes |
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |