BC637 | CDIL
Bipolar junction transistor, NPN, 1 A, 60 V, THT, TO-92, BC637
Unit Price (€ / pc.)
0.0619 € *
Available: 252 pcs.
NPN transistor, BC637, CDIL
The BC637 NPN silicon planar epitaxial transistor is designed for use as a high current transistor.
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Version | NPN | |
| Assembly | THT | |
| Min DC gain | 40 mA | |
| Enclosure | TO-92 | |
| Rated current | 1 A | |
| Collector current | 1 A | |
| min. operating temperature | -55 °C | |
| Power dissipation | 0.8 W | |
| Transit frequency fTmin | 200 MHz | |
| Saturation voltage | 500 mV | |
| Max DC amplification | 250 mA | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 60 V | |
| max.voltage between collector and emitter Vceo | 60 V |
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Logistics
| Property | Value |
|---|---|
| Customs tariff number | 85412900 |
| Country of origin | IN |
Compliance
| Property | Value |
|---|---|
| RoHS conform | Yes |
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |