BIDNW30N60H3 | Bourns Electronics GmbH
IGBT, THT, 600 V, 30 A, TO-247N, BIDNW30N60H3
Product by Bourns Electronics GmbH at Bürklin Elektronik
Insulated gate bipolar transistor (IGBT), BIDNW30N60H3, Bourns
The BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses.
Features
- Low Collector-Emitter Saturation Voltage (VCE(sat)
- Trench-gate field-stop technology
- Low switching loss
- RoHS compliant
Applications
- Switch-Mode Power Supplies (SMPS)
- Uninterruptible Power Sources (UPS)
- Power Factor Correction (PFC)
| Version | single | |
| Enclosure | TO-247 | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Assembly | THT | |
| Saturation voltage | 2 V | |
| Switching loss b. switch off Eoff typ. | 0.45 J | |
| Switching loss at switch-on Eon typ. | 1.85 J | |
| Power dissipation | 230 W |
| Customs tariff number | 85412900 |
| Original Packaging | Bar with 30 pieces |
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
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